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Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 80MHz 100mW Surface Mount ES6
Category | Transistors - Bipolar (BJT) - Arrays | |
Manufacturer | Toshiba Semiconductor and Storage | |
RoHS | 1 | |
Packaging | Tape & Reel (TR) | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | ES6 | |
Package / Case | SOT-563, SOT-666 | |
Series | Automotive, AEC-Q101 | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V | |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA, 300mV @ 10mA, 100mA | |
Frequency - Transition | 80MHz | |
Current - Collector Cutoff (Max) | 100nA (ICBO) | |
Voltage - Collector Emitter Breakdown (Max) | 50V | |
Current - Collector (Ic) (Max) | 150mA | |
Transistor Type | NPN, PNP | |
Power - Max | 100mW | |
Other Names | 264-HN1B04FE-GRLXHFTR 264-HN1B04FE-GR,LXHFCT 264-HN1B04FE-GRLXHFCT 264-HN1B04FE-GRLXHFDKR 264-HN1B04FE-GR,LXHFTR 264-HN1B04FE-GR,LXHFTR-ND 264-HN1B04FE-GR,LXHFCT-ND 264-HN1B04FE-GR,LXHFDKR-ND 264-HN1B04FE-GR,LXHFDKR |
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