Please fill in your information in the form , we will contact you and give you the cad model as soon as possible.
Bipolar (BJT) Transistor PNP 160 V 1.5 A 100MHz 10 W Through Hole TO-126N
Category | Transistors - Bipolar (BJT) - Single | |
Manufacturer | Toshiba Semiconductor and Storage | |
RoHS | 1 | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-126N | |
Base Product Number | TTA004 | |
Series | - | |
Package / Case | TO-225AA, TO-126-3 | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA, 5V | |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA | |
Frequency - Transition | 100MHz | |
Current - Collector Cutoff (Max) | 100nA (ICBO) | |
Voltage - Collector Emitter Breakdown (Max) | 160 V | |
Current - Collector (Ic) (Max) | 1.5 A | |
Transistor Type | PNP | |
Power - Max | 10 W | |
Other Names | TTA004BQS TTA004BQ(S TTA004B,Q(S TTA004BQ TTA004BQ(S-ND |
Not the price you want? Fill the forms and we'll contact you ASAP.